Resist pattern thickening material, method for forming resist pattern, semiconductor device and method for manufacturing the same

ABSTRACT

The present invention provides a resist pattern thickening material, which can utilize ArF excimer laser light; which, when applied over a resist pattern to be thickened, e.g., in form of lines and spaces pattern, can thicken the resist pattern to be thickened regardless of the size of the resist pattern to be thickened; and which is suited for forming a fine space pattern or the like, exceeding exposure limits. The present invention also provides a process for forming a resist pattern and a process for manufacturing a semiconductor device, wherein the resist pattern thickening material of the present invention is suitably utilized.

CROSS-REFERENCE TO RELATED APPLICATIONS

This is a divisional of U.S. application Ser. No. 11/831,576 filed Jul.31, 2007, which is based upon and claims the benefits of the priorityfrom the prior Japanese Patent Application Nos. 2006-260854 filed onSep. 26, 2006 and 2007-189182 filed on Jul. 20, 2007 the entire contentsof which are incorporated herein by reference.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a resist pattern thickening materialcapable of forming a fine space pattern of resist, exceeding exposurelimits (resolution limits) of light sources of available exposuredevices by thickening a resist pattern to be formed when manufacturing asemiconductor device, and the present invention also relates to a methodfor forming a resist pattern, a semiconductor device, and a method formanufacturing the semiconductor device.

2. Description of the Related Art

Semiconductor integrated circuits are becoming more highly integrated,and LSIs and VLSIs are increasingly being put into practical use.Accompanying this trend, interconnection patterns are more finelyformed. To form a fine interconnection pattern, a lithographic techniqueis very useful in which a substrate is coated with a resist film, isselectively exposed, and thereafter, is developed to thereby form aresist pattern, and the substrate is subjected to a dry etchingtreatment by using the resist pattern as a mask, and thereafter, byremoving the resist pattern, the desired pattern, for example, aninterconnection pattern is obtained. Utilization of such a lithographictechnique with the use of an exposure light for microfabrication isstill strongly demanded to keep high-productivity of patterns even nowpatterns are becoming increasingly fine. For this reason, for a lightused for exposure, i.e, an exposure light, not only a deep ultravioletlight having a shorter wavelength has been pursued, but also variousinventive efforts have been done for mask pattern itself, for the shapeof light source and the like. There is still much demand fordevelopments of a technique allowing for life-prolonging of an exposurelight to draw a fine pattern in an easy method.

To overcome the above technical problems, there has been proposed atechnique that a resist pattern formed from a conventional resistmaterial is thickened with the use of a resist pattern thickeningmaterial (hereinafter, may be sometimes referred to as “resist swellingmaterial”) capable of forming a fine space pattern of resist to therebyform a fine pattern. For example, a technique has been proposed in whicha resist pattern is formed, then an aqueous solution material containinga polyvinyl acetal resin and a silicone resin each capable of affordingcrosslinkability as a base is applied over a surface of the resistpattern to form a coated film, the coated film is heated to therebysubjecting the coated film and the resist pattern to a crosslinkingreaction at the contact interface therebetween by utilizing a residualacid in the resist pattern, and then the resist pattern is thickened(hereinafter, may be sometimes referred to as “swelled”) by rinsing thesurface of the crosslinked resist pattern with water or an alkalineaqueous solution to thereby shorten a distance between the respectivelines of the resist pattern and form a fine space pattern of resist,thereby forming a desired pattern, for example, a desiredinterconnection pattern formed in the same shape as in the space patternof resist (see Japanese Patent Application Laid-Open (JP-A) No.11-283910). Further, for the above-noted aqueous solution material, acomposition with a crosslinker further added thereto is proposed in viewthat a substantial amount of reduction of the width of space pattern ofresist can be expected.

However, the type of chemical agents that can be linked to acoater/developer track to be used in semiconductor process at present islimited to resist materials and rinse solutions, and it is verydifficult to set up a new process line for a new chemical agent. In theconventional semiconductor process, it is not based on the assumptionthat an aqueous solution material is applied over a surface of a resistpattern, and thus it is also difficult to use such an aqueous solutionmaterial because of the necessity of a new control for waste fluid.

In addition, with the use of such a conventional material compositionutilizing a crosslinking reaction, it is difficult to control the amountof reaction, and there are the following shortcomings. It is liable tocause differences in the amount of reaction depending on the initialpattern size of a resist pattern, loss of a resist pattern caused by anembedded space pattern of resist, dependence of the amount of reactionon the used pattern shape and the like, and the process margin isnarrow.

From the perspective of forming a fine interconnection pattern, it isdesired to utilize, as an exposure light, for example, an ArF (argonfluoride) excimer laser light having a wavelength of 193 nm which has ashorter wavelength than that of a KrF (krypton fluoride) excimer laserlight (wavelength: 248 nm). In the meanwhile, when a pattern is formedutilizing an X-ray, an electron beam, or the like, each of which has afurther shorter wavelength than that of the ArF (argon fluoride) excimerlaser light (wavelength: 193 nm), it results in a high-cost and alow-productivity. Therefore, it is desirable to utilize the ArF (argonfluoride) excimer laser light (wavelength: 193 nm).

With the use of the composition for the aqueous solution materialdescribed in Japanese patent Application Laid Open (JP-A) No. 11-283910,it has been known that the use of the aqueous solution materialcomposition is not effective in thickening (swelling) an ArF resistpattern containing a resin which is different from the resin used forKrF resist patterns, although it is effective in thickening (swelling) aKrF resist pattern using a phenol resin, and there is a problem that theaqueous solution material composition cannot be utilized for ArF resistswhich are typically used for processing advanced devices.

Furthermore, a reduced resist pattern using the polyvinyl acetal resinas a base, which is obtained by the technique described in JapanesePatent Application Laid-Open (JP-A) No. 11-283910 may be sometimesinsufficient in dry etch resistance to cause a problem withprocessability. In the meanwhile, in case of a resist pattern using thesilicone resin as a base, an etching residue of the silicone resinoccurs, and therefore, it is often needed to further remove the residue,and the resist pattern is not practical, although the dry etchresistance thereof is satisfactorily provided.

Therefore, it is desired to develop a technique for forming a fine spacepattern of resist and forming an interconnection pattern, etc. which iscapable of using ArF (argon fluoride) excimer laser light as a lightsource during patterning without the necessity of setting up a newdevice, which is capable of sufficiently thickening an ArF resistpattern, etc. that cannot be sufficiently thickened or swelled by usingthe aqueous solution material containing the crosslinkable resin or theresin containing a crosslinker, at low cost, easily.

The present invention aims at solving the shortcomings in the prior art,and can achieve the following objects.

An object of the present invention is to provide a resist patternthickening material which can utilize also an ArF (argon fluoride)excimer laser light as an exposure light during patterning; which iscapable of thickening a resist pattern such as a lines & spaces patternwithout depending on the size of a resist pattern to be thickened byonly applying the resist pattern thickening material over the surface ofthe formed resist pattern formed from the ArF resist or the like; whichcan be rinsed with water or an alkaline developer; which is excellent inetch resistance; and which is capable of forming a fine space pattern ofresist, exceeding exposure limits (resolution limits) of light sourcesof available exposure devices, at low cost, easily, and efficiently.

Another object of the present invention is to provide a method forforming a resist pattern which, during patterning a resist pattern, canutilize also an ArF excimer laser light as an exposure light without thenecessity of setting up a new device; which is capable of thickening aresist pattern such as a lines & spaces pattern without depending on thesize of a resist pattern to be thickened; and which is capable offorming a fine space pattern of resist, exceeding exposure limits(resolution limits) of light sources of available exposure devices, atlow cost, easily, and efficiently.

Yet another object of the present invention is to provide a method formanufacturing a semiconductor device in which, during patterning aresist pattern, ArF excimer laser light can be utilized as a lightsource without the necessity of setting up a new device; a fine spacepattern of resist, exceeding exposure or resolution limits of lightsources of available exposure devices, can be formed; and which canefficiently mass-produce a high performance semiconductor having a fineinterconnection pattern formed using the space patter of resist, and isto also provide a high performance semiconductor which is manufacturedby the method for manufacturing a semiconductor device and has fineinterconnection patterns.

In view of the above-mentioned shortcomings, the inventors of thepresent invention have investigated vigorously, and have obtained thefollowing findings. Specifically, the present inventors found out thatin swelling of a resist pattern using a conventional resist swellingagent containing an aliphatic resin, a silicone resin, a crosslinker andthe like, the resist pattern cannot be thickened without the utilizationof a crosslinking reaction caused by a residual acid, however, as asubstitute for the conventional method, the use of a resist patternthickening material which contains at least a resin, a benzyl alcohol, abenzylamine, and derivatives thereof, which is a nonaqueous material andcontains no acid-generator and no crosslinker makes it possible toeasily control reactions as well as to thicken the resist patternwithout depending on the size of a resist pattern to be thickenedbecause no crosslinking reaction is caused therein, and the resistpattern thickening material can be rinsed with water or an alkalinedeveloper. The present inventors also found out that it is possible toobtain a resist pattern thickening material which is excellentparticularly in etch resistance when a phenol resin, polyvinylpyrolidoneand the like are used as the resin. These findings led to the completionof the present invention.

BRIEF SUMMARY OF THE INVENTION

The present invention is based on the findings of the present inventors.The means for solving aforesaid problems are described in attachedclaims.

The resist pattern thickening material of the present invention containsat least a resin and a compound represented by the following GeneralFormula (1), is a nonaqueous material, and contains no acid-generatorand no crosslinker.

In the General Formula (1), “X” represents a functional grouprepresented by the following Structural Formula (1); “Y” represents atleast any one of a hydroxyl group, an amino group, an alkylgroup-substituted amino group, an alkoxy group, an alkoxycarbonyl group,and an alkyl group, and the number of substituents in an amino groupsubstituted by alkyl groups is an integer of 1 or 2; “m” is an integerof 1 or more; and “n” is an integer of 0 or more.

In the Structural Formula (1), “R¹” and “R²” may be same to each otheror different from each other and respectively represent a hydrogen atomor a substituent group; “Z” represents at least any one of a hydroxylgroup, an amino group, an alkyl group-substituted amino group, and analkoxy group, and the number of substituents in an amino groupsubstituted by alkyl groups is an integer of 1 or 2.

After the resist pattern thickening material is applied over the surfaceof a resist pattern, the resist pattern thickening material residingnear the interface with the resist pattern infiltrates into the resistpattern to interact with or be mixed with the material of the resistpattern, and the compound represented by the General Formula (1) reactsto the resin residing near the compound. At this point in time, asurface layer or a mixing layer which is formed as a result of aninteraction between the resist pattern thickening material and theresist pattern can be efficiently formed on the surface of the resistpattern in a state where the resist pattern constitutes the innerlayerthereof because of excellent affinity between the resist patternthickening material and the resist pattern. As the result, the resistpattern can be efficiently thickened with the resist pattern thickeningmaterial. The thus thickened (hereinafter, may be referred to as“swelled”) resist pattern (hereinafter, may be referred to as “thickenedresist pattern”) is uniformly thickened with the resist patternthickening material. For this reason, a space pattern of resist(hereinafter, may be sometimes referred to as “space pattern”) to beformed with the thickened resist pattern has a fine structure, exceedingthe exposure limit (resolution limit) of light source of an availableexposure device. Since the resist pattern thickening material of thepresent invention contains a compound represented by the General Formula(1), the resist pattern thickening material can exhibit an effect ofthickening a resist pattern efficiently and uniformly, irrespective ofthe type and the size of a material used for the resist pattern and hasless dependency on the type and the size of the material used for theresist pattern. When a phenol resin, polyvinylpyrolidone, and the likeare used as the resin, the resist pattern is excellent particularly inetch resistance because the resin and the compound represented by theGeneral Formula (1) respectively have an aromatic ring. For this reason,the resist pattern thickening material of the present invention can alsobe preferably used in forming a resist pattern such as a lines & spacespattern on an interconnection layer of a LOGIC LSI in which varioussizes of thickened resist patterns are utilized.

The method for forming a resist pattern of the present inventionincludes at least forming a resist pattern on a surface of a workpieceto be processed and applying a resist pattern thickening material overthe surface of the workpiece so as to cover the surface of the resistpattern.

In the method for forming a resist pattern of the present invention,after a resist pattern is formed and the resist pattern thickeningmaterial is applied over the surface of the resist pattern, the resistpattern thickening material residing near the interface with the resistpattern infiltrates into the resist pattern to interact with or be mixedwith the material of the resist pattern, and the compound represented bythe following General Formula (1) reacts to the resin residing near thecompound. For this reason, a surface layer or a mixing layer formed as aresult of an interaction between the resist pattern thickening materialand the resist pattern is efficiently formed on the surface of theresist pattern in a state where the resist pattern constitutes theinnerlayer thereof. The thus thickened resist pattern is uniformlythickened with the resist pattern thickening material. Therefore, aspace pattern of resist formed with the thickened resist pattern has afine structure, exceeding the exposure limit (resolution limit) of lightsources of an available exposure device. Since the resist patternthickening material of the present invention contains a compoundrepresented by the General Formula (1), the resist pattern thickeningmaterial can exhibit an effect of thickening the resist patternefficiently and uniformly, irrespective of the type and the size of amaterial used for the resist pattern and has less dependency on the typeand the size of the material used for the resist pattern. When a phenolresin, polyvinylpyrolidone, and the like are used as the resin, theresist pattern is excellent particularly in etch resistance because theresin and the compound represented by the General Formula (1)respectively have an aromatic ring. For this reason, the resist patternthickening material of the present invention can also be preferably usedin forming resist patterns such as a lines & spaces pattern on aninterconnection layer of a LOGIC LSI where not only a contact holepattern but also various sizes of thickened resist patterns areutilized.

The method for manufacturing a semiconductor device of the presentinvention includes forming, on a surface of a workpiece to be processed,a resist pattern; applying the resist pattern thickening material of thepresent invention over the surface of the workpiece so as to cover thesurface of the resist pattern to thereby thicken the resist pattern; andetching the surface of the workpiece using the thickened resist patternas a mask so as to pattern the surface of the workpiece.

In the method for manufacturing a semiconductor device of the presentinvention, in the forming of a resist pattern, a resist pattern isformed on a surface of a workpiece to which a pattern such as aninterconnection pattern is to be formed, and the above-noted resistpattern thickening material is applied so as to cover the surface of theresist pattern. Then, the resist pattern thickening material residingnear the interface with the resist pattern infiltrates into the resistpattern to interact with or be mixed with the material of the resistpattern, and the compound represented by the General Formula (1) reactsto the resin residing near the compound. Then, a surface layer or amixing layer formed as a result of an interaction between the resistpattern thickening material and the resist pattern can be efficientlyformed on the surface of the resist pattern in a state where the resistpattern constitutes the innerlayer thereof. The thus thickened resistpattern is uniformly thickened with the resist pattern thickeningmaterial. For this reason, a space pattern of resist formed with thethickened resist pattern has a fine structure, exceeding the exposurelimit (resolution limit) of light sources of an available exposuredevice. Since the resist pattern thickening material of the presentinvention contains a compound represented by the General Formula (1),the resist pattern thickening material can exhibit an effect ofthickening the resist pattern efficiently and uniformly, irrespective ofthe type and the size of a material used for the resist pattern and hasless dependency on the type and the size of the material used for theresist pattern. When a phenol resin, polyvinylpyrolidone and the likeare used as the resin, the resist pattern is excellent particularly inetch resistance because the resin and the compound represented by theGeneral Formula (1) respectively have an aromatic ring. Therefore, withthe use of the resist pattern thickening material of the presentinvention, it is possible to easily and precisely form a thickenedresist pattern such as a lines & spaces pattern on an interconnectionlayer of a LOGIC LSI where not only a contact hole pattern but alsovarious sizes of thickened resist patterns are utilized.

Subsequently, in the patterning of the thickened resist pattern, byetching the surface of the workpiece using the thickened resist patternwhich has been thickened in the forming of the resist pattern, thesurface of the workpiece can be patterned finely and precisely withaccurate dimension, thus high quality and high performance semiconductordevices each having a pattern such as an extremely fine and preciseinterconnection pattern with excellent accurate dimension can bemanufactured efficiently.

The semiconductor device of the present invention is manufactured by themethod for manufacturing a semiconductor device of the presentinvention. The semiconductor device has patterns, for example,interconnection patterns, with fine, precise, and accurate dimension,and is of high quality and of high performance.

BRIEF DESCRIPTION OF THE SEVERAL VIEWS OF THE DRAWINGS

FIG. 1 is a schematic diagram for explaining one example of themechanism of thickening a resist pattern by using a resist patternthickening material of the present invention, and showing the statewhere the resist pattern thickening material is applied over the surfaceof the resist pattern.

FIG. 2 is a schematic diagram for explaining one example of themechanism of thickening a resist pattern by using a resist patternthickening material of the present invention, and showing the statewhere the resist pattern thickening material infiltrates into thesurface of the resist pattern.

FIG. 3 is a schematic diagram for explaining one example of themechanism of thickening a resist pattern by using a resist patternthickening material of the present invention, and showing the statewhere the surface of the resist pattern is thickened with the resistpattern thickening material.

FIG. 4 is a schematic diagram for explaining an example of the methodfor forming a resist pattern of the present invention, and showing thestate where a resist film is formed.

FIG. 5 is a schematic diagram for explaining an example of the methodfor forming a resist pattern of the present invention, and showing thestate where the resist film is subjected to patterning, thereby forminga resist pattern.

FIG. 6 is a schematic diagram for explaining an example of the methodfor forming a resist pattern of the present invention, and showing thestate where the resist pattern thickening material is applied over thesurface of the resist pattern.

FIG. 7 is a schematic diagram for explaining an example of the methodfor forming a resist pattern of the present invention, and showing thestate where a mixing occurred at the vicinity of the surface of theresist pattern and the resist pattern thickening material infiltratesinto the resist pattern.

FIG. 8 is a schematic diagram for explaining an example of the methodfor forming a resist pattern of the present invention, and showing thestate where the resist pattern thickening material is developed.

FIG. 9 is a top view for explaining a FLASH EPROM which is one exampleof a semiconductor device manufactured by the method for manufacturing asemiconductor device of the present invention.

FIG. 10 is a top view for explaining a FLASH EPROM which is anotherexample of a semiconductor device manufactured by the method formanufacturing a semiconductor device of the present invention.

FIG. 11 is a cross-sectional schematic diagram for explaining a methodfor manufacturing the FLASH EPROM which is an example of the method formanufacturing a semiconductor device of the present invention.

FIG. 12 is a cross-sectional schematic diagram for explaining a methodfor manufacturing the FLASH EPROM which is an example of the method formanufacturing a semiconductor device of the present invention, andshowing a step after the step shown in FIG. 11.

FIG. 13 is a cross-sectional schematic diagram for explaining a methodfor manufacturing the FLASH EPROM which is an example of the method formanufacturing a semiconductor device of the present invention, andshowing a step after the step shown in FIG. 12.

FIG. 14 is a cross-sectional schematic diagram for explaining a methodfor manufacturing the FLASH EPROM which is an example of the method formanufacturing a semiconductor device of the present invention, andshowing a step after the step shown in FIG. 13.

FIG. 15 is a cross-sectional schematic diagram for explaining a methodfor manufacturing the FLASH EPROM which is an example of the method formanufacturing a semiconductor device of the present invention, andshowing a step after the step shown in FIG. 14.

FIG. 16 is a cross-sectional schematic diagram for explaining a methodfor manufacturing the FLASH EPROM which is an example of the method formanufacturing a semiconductor device of the present invention, andshowing a step after the step shown in FIG. 15.

FIG. 17 is a cross-sectional schematic diagram for explaining a methodfor manufacturing the FLASH EPROM which is an example of the method formanufacturing a semiconductor device of the present invention, andshowing a step after the step shown in FIG. 16.

FIG. 18 is a cross-sectional schematic diagram for explaining a methodfor manufacturing the FLASH EPROM which is an example of the method formanufacturing a semiconductor device of the present invention, andshowing a step after the step shown in FIG. 17.

FIG. 19 is a cross-sectional schematic diagram for explaining a methodfor manufacturing the FLASH EPROM which is an example of the method formanufacturing a semiconductor device of the present invention, andshowing a step after the step shown in FIG. 18.

FIG. 20 is a cross-sectional schematic diagram for explaining the methodfor manufacturing the FLASH EPROM which is another example of the methodfor manufacturing a semiconductor device of the present invention.

FIG. 21 is a cross-sectional schematic diagram for explaining the methodfor manufacturing the FLASH EPROM which is another example of the methodfor manufacturing a semiconductor device of the present invention, andshowing a step after the step shown in FIG. 20.

FIG. 22 is a cross-sectional schematic diagram for explaining the methodfor manufacturing the FLASH EPROM which is another example of the methodfor manufacturing a semiconductor device of the present invention, andshowing a step after the step shown in FIG. 21.

FIG. 23 is a cross-sectional schematic diagram for explaining the methodfor manufacturing the FLASH EPROM which is yet another example of themethod for manufacturing a semiconductor device of the presentinvention.

FIG. 24 is a cross-sectional schematic diagram for explaining the methodfor manufacturing the FLASH EPROM which is yet another example of themethod for manufacturing a semiconductor device of the presentinvention, and showing a step after the step shown in FIG. 23.

FIG. 25 is a cross-sectional schematic diagram for explaining the methodfor manufacturing the FLASH EPROM which is yet another example of themethod for manufacturing a semiconductor device of the presentinvention, and showing a step after the step shown in FIG. 24.

DETAILED DESCRIPTION OF THE INVENTION (Resist Pattern ThickeningMaterial)

The resist pattern thickening material of the present invention containsat least a resin and a compound represented by the following GeneralFormula (1) and further contains a surfactant, an organic solvent, andother components suitably selected in accordance with the intended use,and the resist pattern thickening material is a nonaqueous material andcontains no acid-generator and no crosslinker.

In the General Formula (1), “X” represents a functional grouprepresented by the following Structural Formula (1); “Y” represents atleast any one of a hydroxyl group, an amino group, an alkylgroup-substituted amino group, an alkoxy group, an alkoxycarbonyl group,and an alkyl group, and the number of substituents in an amino groupsubstituted by alkyl groups is an integer of 1 or 2; “m” is an integerof 1 or more; and “n” is an integer of 0 or more.

In the Structural Formula (1), “R¹” and “R²” may be same to each otheror different from each other and respectively represent a hydrogen atomor a substituent group; “Z” represents at least any one of a hydroxylgroup, an amino group, an alkyl group-substituted amino group, and analkoxy group, and the number of substituents in an amino groupsubstituted by alkyl groups is an integer of 1 or 2.

The resist pattern thickening material of the present invention is anonaqueous material. Here, the “nonaqueous material” means a materialthat contains no water, and the nonaqueous material preferably containsany one of the organic solvents which will be described below.

It is necessary that the resist pattern thickening material of thepresent invention contains no acid generator and no crosslinker. Thetechnique of thickening of a resist pattern using the resist patternthickening material differs from a conventional technique of swelling ofa resist pattern utilizing a crosslinking reaction based on aciddiffusion.

The resist pattern thickening material of the present invention ispreferably water-soluble or alkali-soluble. When the resist patternthickening material is water-soluble or alkali-soluble, the resistpattern thickening material can be rinsed with water or an alkalinedeveloper to remove unreacted portions and allows for sharing oneresist-developing cup without the necessity of setting up a new processline for a new chemical agent for developing when forming a resistpattern to thereby reduce device cost.

The water-solubility of the resist pattern thickening material is notparticularly limited as long as it has such a solubility that unreactedportions can be removed, and may be suitably adjusted in accordance withthe intended use, however, a solubility that 0.1 g or more of the resistpattern thickening material can be dissolved in 100 g of 25° C. water ispreferable, for example.

The alkali-solubility of the resist pattern thickening material is notparticularly limited and may be suitably selected in accordance with theintended use, however, an alkali-solubility that 0.1 g or more of theresist pattern thickening material can be dissolved in 100 g of 25° C.and 2.38% by mass of a tetramethylammonium hydroxide (TMAH) aqueoussolution is preferable, for example.

An embodiment of the resist pattern thickening material of the presentinvention may be an organic solution, a colloidal dispersion, anemulsion dispersion or the like. It is particularly preferable that theresist pattern thickening material of the present invention is anorganic solution.

—Resin—

The resin is not particularly limited and may be suitably selected inaccordance with the intended use, however, the resin preferably has acyclic structure in at least part of its structure from the perspectivethat it can impart excellent etch resistance to the resist patternthickening material. As a preferred example of the resin containing acyclic structure, at least one selected from phenol resins,polyvinylpyrolidone, styrene-maleic acid copolymers, alkyl resins, andmixtures thereof is exemplified.

The phenol resin is not particularly limited and may be suitablyselected in accordance with the intended use, however, preferredexamples thereof include polyparahydroxystyrene resins, and novolacresins.

Each of these resins may be used alone or in combination with two ormore. Of these, polyparahydroxystyrene resins, novolac resins,polyvinylpyrolidones are preferable.

The content of the resin in the resist pattern thickening material canbe suitably determined in accordance with the type and the content ofthe compound represented by the following General Formula (1), asurfactant, an organic solvent and the like which will be describedbelow.

—Compound Represented by General Formula (1)—

The compound represented by the General Formula (1) is not particularlylimited and may be suitably selected in accordance with the intended useas long as the compound has an aromatic ring in part of its structureand is represented by the following General Formula (1). It isadvantageous to use such a compound having the aromatic ring from theperspective that it can impart excellent etch resistance to the resistpattern thickening material.

In the General Formula (1), “X” represents a functional grouprepresented by the following Structural Formula (1); “Y” represents atleast any one of a hydroxyl group, an amino group, an alkylgroup-substituted amino group, an alkoxy group, an alkoxycarbonyl group,and an alkyl group, and the number of substituents in an amino groupsubstituted by alkyl groups is an integer of 1 or 2; “m” is an integerof 1 or more; and “n” is an integer of 0 or more. The “m” is preferablyan integer of 1 from the perspective of preventability of occurrences ofcrosslinking reaction and easily controlling reactions.

In the Structural Formula (1), “R¹” and “R²” may be same to each otheror different from each other and respectively represent a hydrogen atomor a substituent group; “Z” represents at least any one of a hydroxylgroup, an amino group, an alkyl group-substituted amino group, and analkoxy group, and the number of substituents in an amino groupsubstituted by alkyl groups is an integer of 1 or 2.

In the Structural Formula (1), preferably, “R¹” and “R²” respectivelyrepresent a hydrogen atom. When “R¹” and “R²” are respectively ahydrogen atom, there are many advantages in water-solubility.

In the Structural Formula (1), when “R¹” and “R²” are respectively thesubstituent group, the substituent group is not particularly limited,may be suitably selected in accordance with the intended use, andexamples thereof include ketone (alkylcarbonyl) groups, alkoxycarbonylgroups, and alkyl groups.

As specific examples of a compound represented by the General Formula(1), compounds each having a benzyl alcohol structure, and compoundseach having a benzyl amine structure are preferably exemplified.

The compound having a benzyl alcohol structure is not particularlylimited and may be suitably selected in accordance with the intendeduse. For example, benzyl alcohols, and derivatives thereof arepreferable. Specific examples thereof include benzyl alcohol,2-hydroxybenzyl alcohol (salicyl alcohol), 4-hydroxybenzyl alcohol(salicyl alcohol), 4-hydroxybenzyl alcohol, 2-aminobenzyl alcohol,4-aminobenzyl alcohol, 2,4-dihydroxybenzyl alcohol,1,4-benzenedimethanol, 1,3-benzenedimethanol, 1-phenyl-1,2-ethanediol,and 4-methoxymethylphenol.

The compound having a benzylamine structure is not particularly limitedand may be suitably selected in accordance with the intended use. Forexample, benzylamine and derivatives thereof are preferable.Specifically, benzylamine, 2-hydroxybenzylamine, and2-methoxybenzylamine are exemplified.

Each of these compounds may be used alone or in combination with two ormore.

The content of the compound represented by the General Formula (1) inthe resist pattern thickening material is not particularly limited andmay be suitably adjusted in accordance with the intended use. Forexample, the content of the compound represented by the General Formula(1) is preferably 0.01 parts by mass to 50 parts by mass relative to thetotal content of the resist pattern thickening material, and morepreferably 0.1 parts by mass to 10 parts by mass.

When the content of the compound represented by the General Formula (1)is less than 0.01 parts by mass, a desired reaction amount may not beeasily obtained. When the content of the compound represented by theGeneral Formula (1) is more than 50 parts by mass, it is unfavorablebecause there is a high possibility that the compound precipitates whenthe resist pattern thickening material is applied and then patterndefects occur.

—Surfactant—

When the blendability between the resist pattern thickening material anda resist pattern is required to improve, when a greater amount of thethickening is required, when the in-plane uniformity of thickeningeffect is required to improve in the interface between the resistpattern thickening material and a resist pattern, when defoamability isrequired or the like, an addition of the surfactant makes it possible tomeet these demands.

The surfactant is not particularly limited and may be suitably selectedin accordance with the intended use. Examples of the surfactant includenonionic surfactants, cationic surfactants, anionic surfactants, andamphoteric surfactants. Each of these surfactants may be used alone orin combination with two or more. Of these, nonionic surfactants arepreferable from the perspective that metal ions such as sodium salt andpotassium salt are not contained therein.

For the nonionic surfactant, a nonionic surfactant may be preferablyselected from alkoxylate surfactants, fatty acid ester surfactants,amide surfactants, alcohol surfactants, ethylenediamine surfactants, andsilicone surfactants. Specifically, preferred examples thereof includepolyoxyethylene-polyoxypropylene condensation compounds, polyoxyalkylenealkyl ether compounds, polyoxyethylene alkyl ether compounds,polyoxyethylene derivative compounds, sorbitan fatty acid estercompounds, glycerine fatty acid ester compounds, primary alcoholethoxylate compounds, phenol ethoxylate compounds, nonylphenolethoxylate compounds, octylphenol ethoxylate compounds, lauryl alcoholethoxylate compounds, oleyl alcohol ethoxylate compounds, fatty acidester surfactants, amide surfactants, natural alcohol surfactants,ethylene diamine surfactants, and secondary alcohol ethoxylatesurfactants.

The cationic surfactant is not particularly limited and may be suitablyselected in accordance with the intended use. Preferred examples thereofinclude alkyl cationic surfactants, amide-type quaternary cationicsurfactants, and ester-type quaternary cationic surfactants.

The amphoteric surfactant is not particularly limited and may besuitably selected in accordance with the intended use. Examples thereofinclude amine oxide surfactants, and betaine surfactants.

The content of the surfactant in the resist pattern thickening materialis not particularly limited and may be suitably adjusted in accordancewith the type and the content of the resin and the compound representedby the General Formula (1). For example, the content of the surfactantis preferably 0.005 parts by mass relative to 100 parts by mass of theresist pattern thickening material, more preferably 0.05 parts by massor more to 2 parts by mass from the perspective of the reaction amountand from the perspective that the resist pattern thickening material isexcellent in in-plane uniformity, and still more preferably 0.08 partsby mass to 0.25 parts by mass.

When the content of the surfactant is less than 0.005 parts by mass, thereaction amount of the resist pattern thickening material with a resistpattern does not make much difference as compared to the case where theresist pattern thickening material contains no surfactant, although itis effective in enhancement of coating properties.

—Organic Solvent—

The organic solvent is not particularly limited as long as it does notsubstantially dissolve the resist pattern, and may be suitably selectedin accordance with the intended use. For example, an alcohol solventhaving 4 or more carbon atoms and a glycol solvent having 2 or morecarbon atoms are preferably exemplified.

When the resist pattern thickening material contains the organicsolvent, it is advantageous in that the solubility of the resin with thecompound represented by the General Formula (1) in the resist patternthickening material can be improved.

The alcohol solvent having 4 or more carbon atoms is not particularlylimited and may be suitably selected in accordance with the intendeduse, however, the number of carbon atoms of the alcohol solvent ispreferably 4 to 5. Preferred examples thereof include isobutanol,n-butanol, and 4-methyl-2-pentanol.

The glycol solvent having 2 or more carbon atoms is not particularlylimited and may be suitably selected in accordance with the intendeduse, however, the number of carbon atoms of the glycol solvent ispreferably 2 to 3. Preferred examples thereof include ethylene glycol,and propylene glycol.

Each of these organic solvents may be used alone or in combination withtwo or more. Of these, an organic solvent having a boiling point ofaround 80° C. to 200° C. is preferable in terms that it can preventrapid drying of the resist pattern thickening material when applied, andthe resist pattern thickening material can be efficiently applied withthe use of such an organic solvent.

The content of the organic solvent in the resist pattern thickeningmaterial can be suitably determined in accordance with the type and thecontent of the resin, the compound represented by the General Formula(1), and the surfactant and the like.

—Other Components—

The other components are not particularly limited as long as they do notimpair the effects of the resist pattern thickening material of thepresent invention, and may be suitably selected in accordance with theintended use. Examples of the other components include various additivesknown in the art such as thermal oxidation generators, quencherstypified by amine quencher, and amide quencher.

The content of the other components in the resist pattern thickeningmaterial can be suitably determined in accordance with the type and thecontent of the resin, the compound represented by the General Formula(1), and the surfactant and the like.

—Usage of Resist Pattern Thickening Material—

The resist pattern thickening material of the present invention can beapplied over the surface of the resist pattern for use.

The surfactant may be separately applied over the surface of the resistpattern before the resist pattern thickening material is applied overthe surface of the resist pattern, without containing the surfactant inthe resist pattern thickening material.

When the resist pattern thickening material is applied over the surfaceof the resist pattern, the resist pattern thickening material interactswith or is mixed with the resist pattern, and the compound representedby the General Formula (1) reacts to the resin residing near thecompound to thereby form a layer or a mixing layer formed as a result ofan interaction between the resist pattern thickening material interactsand the resist pattern, on the surface of the resist pattern. As theresult, the thickened resist pattern is thicker than the resist patternto be thickened i.e. the unthickened resist pattern, by an amountcorresponding to the thickness of the mixing layer, and a thickenedresist pattern is formed.

When the compound represented by the General Formula (1) is contained inthe resist pattern thickening material, it makes it possible to obtainthe effect of efficiently and uniformly thickening a resist pattern,irrespective of the type, the size, or the like of material of theresist pattern, and the thickened amount has less dependency on thematerial and the size of the resist pattern.

The diameter and the width of the space pattern of resist formed fromthe thus thickened resist pattern are smaller than those of the spacepattern of resist that has been formed from the unthickened resistpattern. As the result, a fine space pattern of resist can be formed,exceeding the exposure or resolution limit of a light source of theexposure device used in patterning of the resist pattern, namely, withlower values than the threshold limits of opening diameter or patterningintervals allowing for patterning with the wavelength of light used forthe light source. In other words, when a resist pattern is obtained bymeans of ArF excimer laser light, during the patterning of a resistpattern, is thickened with the resist pattern thickening material, thespace pattern of resist formed from the thickened resist pattern canrepresent such fine conditions as those patterned by use of an electronbeam.

The thickened amount of the resist pattern can be controlled within adesired range by appropriately controlling the viscosity, coatingthickness of the resist pattern thickening material, temperature ofbaking, baking time, or the like.

—Material of Resist Pattern—

Material of the resist pattern or a resist pattern to be coated with theresist pattern thickening material of the present invention is notparticularly limited and may be suitably selected in accordance with theintended use. For example the material of the resist pattern may be ofnegative polarity or positive polarity. Preferred examples thereofinclude g-ray resists, i-ray resists, KrF resists, ArF resists, F₂resists, and electron beam resists etc. that can be respectivelypatterned with a g-ray, an i-ray, a KrF excimer laser, an ArF excimerlaser, an F₂ excimer laser, an electron beam or the like. Each of theseresists may be a chemically-amplified resist or a non-chemicallyamplified resist. Of these, a KrF resist, an ArF resist, and a resistcontaining an acrylic resin are preferable. From the perspective of finepatterning and improvements of throughput, at least any one of an ArFresist which is desired to extend the exposure limit thereof and aresist containing an acrylic resin are more preferable.

Specific examples of the material of the resist pattern include anacrylic resist having an adamantyl group at side chains thereof, acycloolefin-maleic anhydride (COMA) resist, a cycloolefin resist, andhybrid (cycloaliphatic acrylic-COMA copolymer) resist. Each of thesematerials may be fluorine-modified.

The method of forming the resist pattern, the size and the thickness ofthe resist pattern are not particularly limited and may be suitablyselected in accordance with the intended use. The thickness of theresist pattern can be suitably determined based on a surface of aworkpiece to be processed, and etching conditions. Typically, thethickness of the resist pattern is about 0.2 μm to 700 μm.

The thickening of the resist pattern using the resist pattern thickeningmaterial will be hereinafter explained with reference to drawings.

As shown in FIG. 1, after a resist pattern 3 is formed on a surface of aworkpiece (base) 5, a resist pattern thickening material 1 is appliedover the surface of the resist pattern 3, and the applied resist patternthickening material is baked (heated and dried) to thereby form a coatedfilm. Then, a mixing or infiltrating of the resist pattern thickeningmaterial 1 into the resist pattern 3 takes place at the interfacebetween the resist pattern 3 and the resist pattern thickening material1, and the compound represented by the General Formula (1) in the resistpattern thickening material 1 reacts with the resin residing near thecompound. Then, as shown in FIG. 2, a surface layer or mixing layer 10 ais formed as the result of reaction of the mixed or infiltrated portionsat the interface of an inner layer resist pattern 10 b (the resistpattern 3) and the resist pattern thickening material 1. At this time,the inner layer resist pattern 10 b (the resist pattern 3) can be stablyand uniformly thickened without depending on the size of the inner layerresist pattern 10 b (the resist pattern 3) because the compoundrepresented by the General Formula (1) is contained in the resistpattern thickening material 1.

Subsequently, as shown in FIG. 3, by rinsing the resist pattern 3, theportions with no interaction or mixing with the resist pattern 3 orportions with less interaction or mixing with the resist pattern 3,i.e., the portions having high alkali-solubility, in the resist patternthickening material 1 applied over the surface of the resist pattern 3,are dissolved and removed, and therefore a thickened resist pattern 10which has been uniformly thickened is developed or formed.

The resist pattern 3 may be rinsed by use of water or an alkalinedeveloper.

The thickened resist pattern 10 has, on the surface of the inner layerresist pattern 10 b (the resist pattern 3), the surface layer 10 a(mixing layer) which has been formed as the result of reaction of theresist pattern thickening material 1 with the resist pattern 3. Sincethe thickened resist pattern 10 is thicker than the resist pattern 3 byan amount corresponding to the thickness of the surface layer 10 a, thesize of a space pattern formed using the thickened resist pattern 101.e.the distance between adjacent elements of the thickened resist pattern10 or opening diameter of the hole pattern formed from the thickenedresist pattern 10, is smaller than that formed from the unthickenedresist pattern 3. Thus, the space pattern of resist can be formedfinely, exceeding exposure or resolution limits of a light source of theexposure device used in forming the resist pattern 3. Namely, when aresist pattern is patterned by means of ArF excimer laser light as anexposure light and is thickened with the resist pattern thickeningmaterial, the space pattern formed from the thickened resist pattern 10can represent such fine conditions as those patterned by use of anelectron beam. The space pattern formed from the thickened resistpattern 10 is finer and more precise than the space pattern formed fromthe resist pattern 3.

The surface layer 10 a (mixing layer) in the thickened resist pattern 10is formed from the resist pattern thickening material 1. The obtainedthickened resist pattern 10 is excellent in etch resistance even whenthe resist pattern 3 (the inner layer resist pattern 10 b) is formedfrom a material which has low etch resistance, since the compoundrepresented by the General Formula (1) in the resist pattern thickeningmaterial 1 has an aromatic ring. When the resin in the resist patternthickening material 1 is the phenol resin containing a cyclic structure,the etch resistance of the obtained thickened resist pattern 10 isfurther improved.

The resist pattern thickening material of the present invention can bepreferably used for thickening a resist pattern and finely forming aspace pattern of resist, exceeding exposure limits (resolution limits)of light sources of available exposure devices. The resist patternthickening material of the present invention can be preferably usedparticularly in the method for forming a resist pattern of the presentinvention and the method for manufacturing a semiconductor device of thepresent invention.

Since the compound represented by the General Formula (1) in the resistpattern thickening material of the present invention has an aromaticring, the resist pattern thickening material of the present inventioncan be preferably used for coating and thickening of a resist patternformed from a resin or the like that needs to improve the surface etchresistance thereof because the surface of the resist pattern is to beexposed to a plasma. Further, when the resin in the resist patternthickening material of the present invention is the phenol resincontaining a cyclic structure, the resist pattern thickening material ofthe present invention can be preferably used for coating or thickeningthe resist pattern.

With the use of the resist pattern thickening material of the presentinvention, for example, when a resist pattern is pretreated with analkaline aqueous solution having a pH of 10 or more before thepretreatment with the resist pattern thickening material of the presentinvention and then the resist pattern is thickened with the resistpattern thickening material, and also when the resist pattern thickeningmaterial of the present invention is used for a resist pattern that hasbeen left under any normal circumstance other than a clean room for oneyear after exposure of the resist pattern, it is possible to thicken theresist pattern with the resist pattern thickening material on the samelevel as the case of not performing the treatment mentioned above. Evenwhen the resist pattern thickening material of the present invention isused for a resist pattern formed by electron beam exposure using anon-chemically amplified resist containing no acid and no acidgenerator, for example, using a non-chemically amplified resist composedof polymethyl methacrylate, the non-chemically amplified resist can bethickened on the same level as a chemically amplified resist. From thesefacts, it is easily understandable that the present invention uses areaction pattern which differs from conventional swelling techniquesutilizing a crosslinking reaction caused by acid diffusion. It can bealso presumed that when the resist pattern thickening material of thepresent invention is used, the thickening of the resist pattern can beachieved depending on the solubility of the resin used in the mixinglayer which is formed from the resist pattern and the resist patternthickening material.

(Method for Forming Resist Pattern)

The method for forming a resist pattern of the present inventionincludes at least forming a resist pattern on a surface of a workpieceto be processed and applying a resist pattern thickening material overthe surface of the workpiece so as to cover the surface of the resistpattern, and further includes other treatments suitably selected inaccordance with the necessity.

For material of the resist pattern, the materials of the resist patternthickening material of the presented invention set forth above arepreferably exemplified.

The resist pattern can be formed following a conventional method.

The resist pattern can be formed on a surface of a workpiece (base). Thesurface of the workpiece (base) is not particularly limited, and may besuitably selected in accordance with the intended use. However, when theresist pattern is formed in a semiconductor device, the surface of theworkpiece (base) is preferably, for example, a surface of asemiconductor substrate. Specific examples thereof include surfaces ofsubstrates such as silicon wafers, and various types of oxide films.

The method of applying the resist pattern thickening material is notparticularly limited and may be suitably selected from among knowncoating methods in accordance with the intended use. Preferred examplesthereof include a spin coating method. When a spin coating method isused, the conditions are as follows, for example, the rotation speed istypically around 100 rpm to 10,000 rpm, and preferably 800 rpm to 5,000rpm, and the rotation time is around 1 second to 10 minutes, and ispreferably 1 second to 90 seconds.

The coated thickness of a resist pattern with the resist patternthickening material is usually around 10 nm to 1,000 nm (100 angstromsto 10,000 angstroms), and preferably 100 nm to 500 nm (1,000 angstromsto 5,000 angstroms).

Note that the surfactant may be separately applied over the surface ofthe resist pattern before the resist pattern thickening material isapplied over the surface of the resist pattern, without containing thesurfactant in the resist pattern thickening material.

When the resist pattern thickening material is applied or thereafter, itis preferable to heat and dry (prebake) the applied resist patternthickening material. When the applied resist pattern thickening materialis prebaked, the resist pattern thickening material can be efficientlymixed with or infiltrated into the resist pattern at the interfacebetween the resist pattern and the resist pattern thickening material.

The prebaking (heating and drying) conditions and the method ofprebaking the applied resist pattern thickening material are notparticularly limited as long as they do not soften the resist pattern,and may be suitably selected in accordance with the intended use. Theapplied resist pattern thickening material may be prebaked once or twoor more times. When the applied resist pattern thickening material isprebaked two or more times, the prebaking temperature in each of two ormore prebaking times may be held constant or may be held differentlyfrom each other. When the prebaking temperature is held constant, theprebaking temperature is preferably 40° C. to 150° C., and morepreferably 70° C. to 120° C. The applied resist pattern thickeningmaterial is preferably prebaked for about 10 seconds to 5 minutes and ismore preferably prebaked for 40 seconds to 100 seconds.

After prebaking (heating and drying) the applied resist patternthickening material, in accordance with the necessity, it is alsopreferable that the applied resist pattern thickening material isfurther heated to accelerate the reaction of the applied resist patternthickening material (reaction baking) from the perspective that thereaction of the mixed or infiltrated portions can be efficientlyprogressed at the interface between the resist pattern and the resistpattern thickening material.

The reaction baking conditions and the method for reaction baking arenot particularly limited and may be suitably selected in accordance withthe intended use, however, a higher temperature condition than theprebaking (heating and drying) temperature is typically employed. Forthe reaction baking conditions, the temperature is around 70° C. to 150°C. and more preferably 90° C. to 130° C. The applied resist patternthickening material is reaction-baked for 10 seconds to 5 minutes andmore preferably 40 seconds to 100 seconds.

Further, it is preferable to rinse the applied resist pattern thickeningmaterial i.e. to remove unreacted portions after the reaction baking. Inthis case, when the applied resist pattern thickening material is rinsedafter the heating, it is preferable in that the portions with nointeraction or mixing with the resist pattern, or the portions with lessinteraction or mixing with the resist pattern, i.e., the portions havinghigh alkali-solubility, in the applied resist pattern thickeningmaterial, are dissolved and removed to thereby rinse and obtain athickened resist pattern.

A solution used for the developing treatment is not particularly limitedand may be suitably selected in accordance with the intended use,however, an alkali developer and water (pure water) are preferablyexemplified. Each of these developers may be used alone or incombination with two or more. In the developing treatment, it isunnecessary to set up a new process line for a new chemical agent, andone resist-developing cup can be shared. Therefore, the device cost canbe reduced.

For the alkali developer, 2.38% by mass of a tetramethyl ammoniumhydroxide (TMAH) aqueous solution is preferably exemplified.

The method for forming a resist pattern of the present invention will bedescribed hereinafter with reference to the drawings.

As shown in FIG. 4, a resist material 3 a is applied over a surface of aworkpiece (base) 5 to be processed. Then, as shown in FIG. 5, the resistfilm is patterned to form a resist pattern 3. Then, a resist patternthickening material 1 is applied over the surface of the resist pattern3, as shown in FIG. 6, and the resist film is pre-baked (heated anddried) to form a coated film. Then, interaction i.e. mixing orinfiltrating of the resist pattern thickening material 1 into the resistpattern 3 takes place at the interface between the resist pattern 3 andthe resist pattern thickening material 1. As shown in FIG. 7, mixed orinfiltrated portions at the interface between the resist pattern 3 andthe resist pattern thickening material 1 further interact or react toeach other, and then the compound represented by the General Formula (1)in the resist pattern thickening material 1 reacts to the resin residingnear the compound. Thereafter, as shown in FIG. 8, by subjecting theresist film to a rinsing treatment, the portions with no reaction orless interaction or mixing with the resist pattern 3, i.e. the portionshaving high alkali-or water-solubility, in the applied resist patternthickening material 1, are dissolved and removed such that a thickenedresist pattern 10 having a surface layer 10 a on an inner layer resistpattern 10 b (the resist pattern 3) can be developed or formed. Notethat the resist pattern thickening material with no reaction or lessinteraction or mixing with the underlying resist pattern can be removedwith water or an alkali developer.

The thickened resist pattern 10 is formed as a result of thickening ofthe resist pattern 3 by use of the resist pattern thickening material 1,and has, on the surface of the inner layer resist pattern 10 b (theresist pattern 3), the surface layer 10 a formed as a result of reactionof the resist pattern thickening material 1. Since the resist patternthickening material 1 contains the compound represented by the GeneralFormula (1), the thickened resist pattern 10 can be efficiently anduniformly thickened irrespective of the size and the type of material ofthe resist pattern 3. The thickened resist pattern 10 is thicker thanthe resist pattern 3 (the inner layer resist pattern 10 b) by an amountcorresponding to the thickness of the surface layer 10 a. Thus, thewidth of the space pattern i.e. the distance between adjacent elementsof the resist pattern, formed from the thickened resist pattern 10 isnarrower than that of the space pattern formed from the resist pattern 3(the inner layer resist pattern 10 b), and the space pattern formed fromthe thickened resist pattern 10 is fine.

Since the surface layer 10 a of the thickened resist pattern 10 isformed from the resist pattern thickening material 1, and the resistpattern thickening material 1 contains the compound represented by theGeneral Formula (1) having an aromatic ring, it is possible to form thethickened resist pattern 10 having the surface layer (mixing layer) 10a, on the surface thereof, which is excellent in etch resistance, evenwhen the resist pattern 3 (the inner layer resist pattern 10 b) isformed from a material which has low etch resistance. When the resin inthe resist pattern thickening material 1 is the phenol resin containinga cyclic structure, the etch resistance of the surface layer (mixinglayer) is further improved.

A resist pattern which is formed by the method for forming a resistpattern of the present invention (hereinafter may be sometimes referredto as “thickened resist pattern”) has, on the surface of the resistpattern, a surface layer which is formed as a result of an interactionor mixing between the resist pattern and the resist pattern thickeningmaterial. Since the resist pattern thickening material contains acompound represented by the General Formula (1) having an aromatic ring,it is possible to efficiently form a thickened resist pattern having, onthe surface thereof, a surface layer (mixing layer) which is excellentin etch resistance, even when the resist pattern is formed from amaterial having low etch resistance. When the resin in the resistpattern thickening material is the phenol resin containing a cyclicstructure, the etch resistance of the surface layer can be furtherimproved. Further, since the thickened resist pattern formed by themethod for forming a resist pattern of the present invention is thickerthan the unthickened resist pattern by an amount corresponding to thethickness of the surface layer or mixing layer, the size such asdiameter and width of the space pattern formed from thickened resistpattern 10 is smaller than that of a space pattern formed from theunthickened resist pattern. Thus, by using the method for forming aresist pattern of the present invention, a fine space pattern of resistcan be formed efficiently.

The thickened resist pattern preferably has high etch resistance. It ispreferable that the etching rate (nm/min) of the thickened resistpattern is equivalent to or less than that of the resist pattern.Specifically, the ratio of the etching rate (nm/min) of the resistpattern to the etching rate (nm/min) of the surface layer or mixinglayer determined under the same condition, i.e. resist pattern/surfacelayer or mixing layer, determined under the same condition is preferably1.1 or more, more preferably 1.2 or more, and particularly preferably1.3 or more.

The etching rate (nm/min) can be determined, for example, by measuringthe reduced amount of a sample film using a conventional etching systemafter etching for a predetermined time, and calculating the reductionper unit time.

The surface layer or mixing layer can be preferably formed by using theresist pattern thickening material of the present invention, and thesurface layer or mixing layer preferably contain a cyclic structure suchas the phenol resin from the perspective of further improvements in theetch resistance of the surface layer.

Whether or not the surface layer or mixing layer contains the cyclicstructure can be checked by, for example, analyzing the IR absorptionspectrum of the surface layer or mixing layer.

The method for forming a resist pattern of the present invention ispreferably used for forming a variety of space patterns of resist, forexample, lines & spaces patterns, hole patterns (e.g. for contact hole),trench (groove) patterns, and the like. A thickened resist patternformed by the method for forming a resist pattern can be used, forexample, as a mask pattern, reticle pattern and the like, and can bepreferably used for manufacturing functional parts such as metal plugs,various interconnections, recording heads, LCDs (liquid crystaldisplays), PDPs (plasma display panels), SAW filters (surface acousticwave filters); optical parts used in connecting optical wiring; fineparts such as microactuators; semiconductor devices; and the like, andcan be preferably used in the method for manufacturing a semiconductordevice of the present invention which will be described hereinafter.

(Semiconductor Device and Method for Manufacturing Semiconductor Device)

The method for manufacturing a semiconductor device of the presentinvention includes a resist pattern forming step and a patterning step,and further includes any other steps suitably selected in accordancewith the necessity.

The semiconductor device of the present invention can be manufactured bythe method for manufacturing a semiconductor device of the presentinvention.

The resist pattern forming step is a step for forming a resist patternon a surface of a workpiece to be processed, and applying the resistpattern thickening material of the present invention over the surface ofthe workpiece so as to cover the surface of the resist pattern tothereby thicken the resist pattern. A thickened resist pattern can beformed on the surface of the workpiece to be processed by the resistpattern forming step.

The details of the resist pattern forming step are the same as thosedescribed in the method for forming a resist pattern of the presentinvention. The resist pattern forming step preferably includes applyingthe resist pattern thickening material over the surface of the formedresist pattern (resist film), and subjecting the applied resist patternthickening material to a heating treatment and a rinsing treatment.

Note that examples of the surface of the workpiece to be processedinclude surface layers of various members in semiconductor devices.Preferred examples thereof are substrates such as silicon wafers,surface layers thereof, and various types of oxide films. The resistpattern to be thickened is as described above. The method of coating isalso as described above. Preferred examples of material of the resistpattern include the ArF resist and resists containing the acrylic resin.The method of applying the resist pattern thickening material, themethod of heating the applied resist pattern thickening material(prebaking method, and reaction baking method), and the rinsingtreatment are as described above.

The patterning step is a step for patterning the surface of theworkpiece by etching the surface of the workpiece using the thickenedresist pattern formed by the resist pattern forming step as a mask orthe like (as a mask pattern or the like).

The method of etching is not particularly limited and may be suitablyselected from among known methods in the art in accordance with theintended use. For example, dry etching is preferably exemplified. Theetching conditions are not particularly limited and may be suitablyselected in accordance with the intended use.

Preferred examples of the other steps include a surfactant coating step,and a rinsing step.

The surfactant coating step is a step for applying the surfactant overthe surface of the resist pattern before the resist pattern formingstep.

The surfactant is not particularly limited, may be suitably selected inaccordance with the intended use, and preferred examples thereof are thesurfactants described above. Specific examples thereof includepolyoxyethylene-polyoxypropylene condensation compounds, polyoxyalkylene alkyl ether compounds, polyoxy ethylene alkyl ether compounds,polyoxy ethylene derivative compounds, sorbitan fatty acid estercompounds, glycerine fatty acid ester compounds, primary alcoholethoxylate compounds, phenol ethoxylate compounds, nonyl phenolethoxylate compounds, octyl phenol ethoxylate compounds, lauryl alcoholethoxylate compounds, oleyl alcohol ethoxylate compounds, fatty acidesters, amides, natural alcohols, ethylenediamine surfactants, secondaryalcohol ethoxylate surfactants, alkyl cationic surfactants, amidequaternary cationic surfactants, ester quaternary cationic surfactants,amine oxide surfactants, betaine surfactants, and silicone surfactants.

By using the method for manufacturing a semiconductor device of thepresent invention, various conductor devices, typified by, for example,logic devices, flash memories, DRAMs, FRAMs can be efficientlymanufactured.

EXAMPLES

Hereafter, the present invention will be further described in detailreferring to specific Examples and Comparative Examples, however, thepresent invention is not limited to the disclosed Examples.

Example 1 Preparation of Resist Pattern Thickening Material

Resist pattern thickening materials A to O each having a compositionshown in Table 1, each of which was a nonaqueous material and containedno acid generator and no crosslinker were prepared.

Note that “Thickened material” shown in Table 1 means a resist patternthickening material, and the letters of “A” to “O” respectivelycorrespond to the resist pattern thickening materials A to O. In theresist pattern thickening materials A to O, the resist patternthickening material A corresponds to a material for ComparativeExamples, and the resist pattern thickening materials B to Orespectively correspond to materials for Examples of the presentinvention. The unit of values shown in parentheses in Table 1 is “partby mass” or “parts by mass”.

In the column “Compound represented by General Formula (1)” for theresist pattern thickening materials B to O, “benzyl alcohol”, “benzylamine” and “the derivative thereof (a derivative of benzyl alcohol) (aderivative of benzyl amine)” are compounds represented by the followingGeneral Formula (1).

In the General Formula (1), “X” represents a functional grouprepresented by the following Structural Formula (1); “Y” represents atleast any one of a hydroxyl group, an amino group, an alkylgroup-substituted amino group, an alkoxy group, an alkoxycarbonyl group,and an alkyl group, and the number of substituents in an amino groupsubstituted by alkyl groups is an integer of 1 or 2; “m” is an integerof 1 or more; and “n” is an integer of 0 or more.

In the Structural Formula (1), “R¹” and “R²” may be same to each otheror different from each other and respectively represent a hydrogen atomor a substituent group; “Z” represents at least any one of a hydroxylgroup, an amino group, an alkyl group-substituted amino group, and analkoxy group, and the number of substituents in an amino groupsubstituted by alkyl groups is an integer of 1 or 2.

In Table 1, “PHS” as shown in the column of “Resin” represents apolyparahydroxystyrene resin (“MARUKA LYNCUR”, manufactured by MaruzenPetrochemical Co., Ltd.); “PVPd” represents a polyvinyl pyrolidone resin(“PVPd K=30”, manufactured by KANTO CHEMICAL CO., INC.);“poly(HS₉₀-Pd₁₀)” represents a hydroxystyrene-vinylpyrolidone copolymer(molecular mass=6,800) and the hydroxystyrene-vinylpyrolidone copolymerwas synthesized by a polymerization reaction using AIBN(azobis-isobutylonitrile) as a radical initiator following aconventional method; and “novolac resin” is manufactured by ZEONCORPORATION.

In the column of “Surfactant”, “KP-341” is a nonionic siliconesurfactant (manufactured by Shin-Etsu Chemical Co., Ltd.); “PC-6” is anonionic surfactant (polynuclear phenol surfactant, manufactured byADEKA CORPORATION); “TN-80” is a nonionic surfactant (primary alcoholethoxylate surfactant, manufactured by ADEKA CORPORATION); and “L-64” isa nonionic surfactant (polyoxyethylene-polyoxypropylene condensationcompound, manufactured by ADEKA CORPORATION).

TABLE 1 Compound represented Surfactant Thickened Resin by GeneralFormula (1) Solvent (part by material (part by mass) (part by mass)(part by mass) mass) A PHS (4) — isobutanol (96) — B PHS (4)4-hydroxybenzyl alcohol (1) isobutanol (96) — C PHS (4) 2-hydroxybenzylalcohol (1) ethylene glycol (40)/ — isobutanol (56) D PHS (4)2-hydroxybenzyl alcohol (1) isobutanol (96) — D′ PHS (4) 2-hydroxybenzylalcohol (1) isobutanol (96) TN-80 (0.25) E PHS (4) 2-hydroxybenzylalcohol (1) isobutanol (96) KP-341 (0.005) F PVPd (4) 4-hydroxybenzylalcohol (1) isobutanol (80)/ — diisopentyl ether (16) G PVPd (4)2-hydroxybenzyl alcohol (1) isobutanol (96) — G′ PVPd (4)2-hydroxybenzyl alcohol (1) isobutanol (96) L-64 (0.1) H PVPd (4)2-hydroxybenzyl alcohol (1) n-butanol (96) PC-6 (0.003) I PVPd (4)2-amino benzyl alcohol (1) 3-methyl-3-pentanol — (46)/isobutanol (50) Jpoly(HS₉₀-Pd₁₀) 2-hydroxybenzyl alcohol (1) isobutanol (90)/ — (4)ethylene glycol (6) K novolac resin 2,4-dihydroxybenzyl alcoholisobutanol (36)/ — (4) (1) ethylene glycol (60) L PHS (4)2-hydroxybenzylamine (1) isobutanol (96) — M PVPd (4)2-hydroxybenzylamine (1) isobutanol (56)/ — ethylene glycol (40) N PHS(4) 2-methoxy benzylamine (1) isobutanol (96) — O PVPd (4) 2-methoxybenzylamine (1) 3-methyl-3-pentanol — (46)/isobutanol (50)

Example 2 Formation of Resist Pattern

Each of the resist pattern thickening materials A to O prepared inExample 1 was applied over a surface of a hole pattern which had beenformed from an ArF resist (“AR 1244)”, manufactured by JSR CORPORATION),the hole pattern having an opening diameter described in the column“Size of unthickened space pattern of resist (before thickening)” inTable 2, by a spin-coating method under the conditions of 1,000 rpm/5 sinitially, and subsequently, 3,500 rpm/40 s. Then, the each of theapplied resist pattern thickening material was baked under the conditionof 110° C./60 s. Next, each of the applied resist pattern thickeningmaterials A to E, J, K, L and N was rinsed with 2.38% by mass of a TMAHalkali developer for 60 seconds and further rinsed with pure water for60 seconds, and each of the applied resist pattern thickening materialsF to I, M and O was rinsed with pure water or 2.38% by mass of a TMAHalkali developer for 60 seconds and further rinsed with pure water for60 seconds to remove unreacted portions of the respective resist patternthickening materials A to O, i.e. the portions with no interaction ormixing with each of the resist patterns. Then, each of the resistpatterns formed from the resist pattern thickening materials A to O wasrinsed to thereby form respective thickened resist patterns.

Table 2 shows the size of a space pattern of resist formed from theobtained thickened resist pattern (shown in the column “Size ofthickened space pattern of resist (after thickening)” in Table 2) andthe size of the initial resist patterns. The initial resist patternmeans a resist pattern having a size of the space pattern of resistformed from the unthickened resist pattern and is shown in the column“Size of unthickened space pattern of resist (before thickening)” inTable 2). In Table 2, the letters “A” to “O” respectively correspond tothe resist pattern thickening materials A to O.

TABLE 2 Size of unthickened Size of thickened space pattern of resistspace pattern of resist Thickened (before thickening) (after thickening)material (nm) (nm) A 107.5 107.3 B 102.3 95.4 C 106.8 98.6 D 108.7 100.6D′ 105.8 88.1 E 106.1 98.3 F 103.5 95 G 108 99.2 G′ 106.3 90.3 H 105.196.3 I 104.2 97.4 J 103.9 96.9 K 105.5 98.5 L 105.5 94.3 M 103.3 92.4 N107.1 98.5 O 106.0 94.7

The results shown in Table 2 demonstrated that the use of each of theresist pattern thickening materials B to O of the present invention informing a hole pattern enabled to narrow down the inner diameter of thehole pattern. In the meanwhile, it was found that when the resistpattern thickening material A for Comparative Example containing nocompound represented by the General Formula (1) was used for forming ahole pattern, there was almost no change in the inner diameter of thehole pattern, and it was impossible to narrow down the inner diameter.Further, each of the thickened resist patterns formed by using each ofthe resist pattern thickening materials A to O was not dissolved and nodeterioration in shape of these resist patterns was observed.

Example 3 Formation of Resist Pattern

Each of the resist pattern thickening materials D and G prepared inExample 1 was applied over a surface of a lines & spaces pattern whichhad been formed from an ArF resist (“AR 1244)”, manufactured by JSRCORPORATION), the lines & spaces patterns respectively had a spaceportion having a varied size (the size described in the column “Size ofunthickened space pattern of resist (before thickening)” in Table 2,i.e., 110 nm, 200 nm, 300 nm, and 500 nm), by a spin-coating methodunder the conditions of 1,000 rpm/5 s initially, and subsequently, 3,500rpm/40 s. Then, the each of the applied resist pattern thickeningmaterial was baked under the condition of 110° C./60 s. Next, theapplied resist pattern thickening material D was rinsed with 2.38% bymass of a TMAH alkali developer for 60 seconds and further rinsed withpure water for 60 seconds. The applied resist pattern thickeningmaterial G was rinsed with pure water for 60 seconds and further rinsedwith pure water for 60 seconds to remove unreacted portions of therespective resist pattern thickening materials D and G i.e. the portionswith no interaction or mixing with each of the resist patterns. Asdescribed above, each of the resist patterns formed from the resistpattern thickening materials D and G was developed to thereby formrespective thickened resist patterns.

Table 3 shows the reduced amount of the size of a space pattern ofresist formed from the obtained thickened resist pattern, i.e., thedifference between “Size of thickened space pattern of resist (afterthickening)” and “Size of unthickened space patter of resist (beforethickening)”) and the size of the initial resist patterns. The initialresist pattern means a resist pattern having a size of the space patternof resist formed from the unthickened resist pattern and is shown in thecolumn “Size of unthickened space pattern of resist (before thickening)”in Table 3). In Table 3, “Thickened material D” and “Thickened materialG” respectively correspond to the resist pattern thickening material Dand the resist pattern thickening material G.

TABLE 3 Size of unthickened Reduced amount of size of space pattern ofresist thickened space pattern of resist (before thickening) (afterthickening) (nm) (nm) Thickened material G Thickened material D 110 7.58.6 200 8.3 9.1 300 8.1 9.2 500 9.4 10.1

The results shown in Table 3 demonstrated that the use of each of theresist pattern thickening materials D and G of the present invention informing a lines & spaces pattern enabled to reduce the width of thespace pattern of resist, the difference in reactivity, i.e., thedifference in reduced amount, between a narrow-width pattern and arelatively wide-width pattern was small, i.e., 2 nm or less, and the useof the resist pattern thickening materials D and G enabled to uniformlyand finely narrow down the space patterns with less dependence on thesize of the lines & spaces patterns.

Example 4 Formation of Resist Pattern

The resist pattern thickening material D of the present invention whichwas prepared in Example 1 was applied over a surface of a hole patternhaving an opening (hole) with an opening diameter of 580 nm, the holepattern has been formed by an electron beam exposure method using anon-chemically amplified electron beam resist (“NANO 495PMMA”manufactured by MicroChem. Corp., U.S.), by a spin-coating method underthe conditions of 1,000 rpm/5 s initially, and subsequently, 3,500rpm/40 s. Then, the applied resist pattern thickening material was bakedunder the condition of 110° C./60 s. Next, the applied resist patternthickening material D was rinsed with pure water for 60 seconds toremove unreacted portions of the resist pattern thickening material D,i.e. the portions with no interaction or mixing with the resist pattern.As described above, each of the resist pattern formed from the resistpattern thickening material D was developed to thereby form a thickenedresist pattern. The space pattern of resist formed from the obtainedthickened resist pattern had an opening diameter of 450 nm.

The resist pattern thickening material of the present invention enabledto thicken a non-chemically amplified electron beam resist. The resultshowed that a resist pattern is not thickened by utilizing acids in theresist pattern and the interaction (mixing) is not a crosslinkingreaction caused by acid diffusion.

Example 5 Evaluation of Etch Resistance

Each of the resist pattern thickening materials D, G, and K was appliedover a surface of a resist formed on a silicon substrate to form asurface layer having a thickness of 0.5 μm.

Further, for comparison with these surface layers, a water-based resistpattern thickening material (comparison material) having the followingcomposition was prepared by using a conventional resin as a base. Then,a surface layer was formed from the comparison material in the samemanner as described above.

<Composition of Comparison Material> Base resin: polyvinyl acetal resin16 parts by mass (“KW-3”, SEKISUI CHEMICAL CO., LTD.) Crosslinker:tetramethoxymethyl glycol uril 1.35 parts by mass Solvent: 98.6 parts bymass of pure water +0.4 parts by mass of isopropyl alcohol

Each of the obtained surface layers was etched for 3 minutes using anetching device (parallel plate type RIE device, manufactured by FUJITSULIMITED) under the conditions of Pμ=200 W, pressure=2.666 Pa (0.02Torr), and CF₄ gas=100 sccm. The reduced amount of the sample film wasmeasured to determine the etching rate. Then, a comparative evaluationwas carried out on the respective surface layers based on the etchingrate of the comparison material. Table 4 shows the measurement results.

TABLE 4 Etching rate Ratio of Material (nm/min) etching rate Comparative627 1.00 material D 606 0.98 G 589 0.94 K 575 0.92

The results shown in Table 4 demonstrated that the resist patternthickening material of the present invention has a remarkably excellentetch resistance as compared to the conventional water-based resistpattern thickening material.

Summarizing the above, the use of the resist pattern thickening materialof the present invention enables to uniformly and finely narrow downspace patterns of resist with less dependence on the size of resistpatterns, and the resist pattern thickening material of the presentinvention allows for sharing one resist-developing cup without thenecessity of setting up a new process line for a new chemical agent fordeveloping because the resist pattern thickening material of the presentinvention can be developed with pure water or an alkali developer.Further, a thickened resist pattern formed from the resist patternthickening material of the present invention, which is a nonaqueousmaterial, is excellent in dry etch resistance and also excellent inprocessability.

Example 6 Flash Memory and Manufacture Thereof

Example 6 illustrates an embodiment of the semiconductor device and themanufacturing process thereof of the present invention using a resistpattern thickening material of the present invention. In Example 6,resist films 26, 27, 29 and 32 are ones thickened by the same method asin Examples 2 and 3 using the resist pattern thickening material of thepresent invention.

FIGS. 9 and 10 are top views (plan views) of a FLASH EPROM which iscalled a FLOTOX type or an ETOX type. FIGS. 11 through 19 are schematiccross-sectional views showing a manufacturing process of the FLASHEPROM. In these figures, the left views are schematic sectional views(sectional views taken along lines A-A) of a memory cell unit (a firstelement region), in a gate width direction (in the X direction in FIGS.9 and 10), in a portion where a MOS transistor having a floating gateelectrode is to be formed. The central views are schematic sectionalviews (sectional views taken along lines B-B) of the memory cell unit ina gate length direction (in the Y direction in FIGS. 9 and 10)perpendicular to the X direction in the same portion in the left views.The right views are schematic sectional views (sectional views takenalong the line A-A in FIGS. 9 and 10) of a portion on which a MOStransistor is to be formed in a peripheral circuit unit (a secondelement region).

Initially, a SiO₂ film was selectively formed in a device isolationregion on a p-type Si substrate 22 and thereby yielded a field oxidefilm 23 of SiO₂ film (FIG. 11). Next, a SiO₂ film was formed by thermaloxidation so as to have a thickness of 10 nm to 30 nm (100 to 300angstroms) as a first gate dielectric film 24 a in the MOS transistor inthe memory cell unit (first element region). In another step, a SiO₂film was formed by thermal oxidation so as to have a thickness of 10 nmto 50 nm (100 to 500 angstroms) as a second gate dielectric film 24 b inthe MOS transistor in the peripheral circuit unit (second elementregion). If the first gate dielectric film 24 a and the second gatedielectric film 24 b should have the same thickness, these oxide filmsmay be simultaneously formed in one step.

Next, the peripheral circuit unit (the right view in FIG. 11) was maskedby a resist film 26 to control a threshold voltage for the formation ofa MOS transistor having n-type depletion type channels in the memorycell unit (the left and central views in FIG. 11). As an n-type dopant,phosphorus (P) or arsenic (As) was injected into a region to be achannel region directly below the floating gate electrode by ionimplantation at a dose of 1×10¹¹ cm⁻² to 1×10¹⁴ cm⁻² and thereby yieldeda first threshold control layer 25 a. The dose and conduction type ofthe dopant can be appropriately selected depending on whether thechannel is a depletion type or an accumulation type.

Next, the memory cell unit (the left and central views in FIG. 12) wasmasked by a resist film 27 to control a threshold voltage for theformation of a MOS transistor having n-type depletion type channels inthe peripheral circuit unit (the right view in FIG. 12). As an n-typedopant, phosphorus (P) or arsenic (As) was injected into a region to bea channel region directly below the gate electrode by ion implantationat a dose of 1×10¹¹ cm⁻² to 1×10¹⁴ cm⁻² and thereby yielded a secondthreshold control layer 25 b.

A first polysilicon film (first conductive film) 28 having a thicknessof 50 nm to 200 nm (500 to 2,000 angstroms) was formed on the entiresurface of the article as a floating gate electrode of the MOStransistor of the memory cell unit (the left and central views in FIG.13) and as a gate electrode of the MOS transistor in the peripheralcircuit unit (the right view in FIG. 13).

With reference to FIG. 14, a resist film 29 was then formed, the firstpolysilicon film 28 was patterned using the resist film 29 as a mask andthereby yielded a floating gate electrode 28 a in the MOS transistor inthe memory cell unit (the left and central views in FIG. 14). In thisprocedure, the first polysilicon film 28 was patterned in the Xdirection to be intended dimensions and was not patterned in the Ydirection to thereby leave a region to be a source-drain (S/D) layercovered by the resist film 29.

The resist film 29 was stripped, a capacitor dielectric film 30 a madeof a SiO₂ film was formed by thermal oxidation so as to cover thefloating gate electrode 28 a and to have a thickness of about 20 nm to50 nm (200 to about 500 angstroms) (the left and central views in FIG.15). In this procedure, a capacitor dielectric film 30 b made of a SiO₂film was also formed on the first polysilicon film 28 in the peripheralcircuit unit (the right view in FIG. 15). These capacitor dielectricfilms 30 a and 30 b are made of a SiO₂ film alone, however, they mayinclude a multilayer film having two or three layers of SiO₂ film andSi₃N₄ film.

Next, a second polysilicon film (second conductive film) 31 was formedso as to have a thickness of 50 nm to 200 nm (500 to 2,000 angstroms) soas to cover the floating gate electrode 28 a and the capacitordielectric film 30 a (FIG. 15). The second polysilicon film 31 serves asa control gate electrode.

With reference to FIG. 16, the memory cell unit (the left and centralviews in FIG. 16) was masked by a resist film 32, the second polysiliconfilm 31 and the capacitor dielectric film 30 b in the peripheral circuitunit (the right view in FIG. 16) were stripped in turn by etching tothereby expose the first polysilicon film 28 from the surface.

With reference to FIG. 17, the second polysilicon film 31, the capacitordielectric film 30 a, and the first polysilicon film 28 a of the memorycell unit (the left and central views in FIG. 17), which firstpolysilicon film 28 a had been patterned only in the X direction, werepatterned in the Y direction to target dimensions of a first gate unit33 a using the resist film 32 as a mask. Thus, a multilayer assemblageof a control gate electrode 31 a, a capacitor dielectric film 30 c, anda floating gate electrode 28 c having a width of about 1 μm in the Ydirection was formed. In addition, the first polysilicon film 28 in theperipheral circuit unit (the right view in FIG. 17) was patterned totarget dimensions of a second gate unit 33 b and thereby yielded a gateelectrode 28 b about 1 μm wide.

Phosphorus (P) or arsenic (As) was injected into the element formingregion of the Si substrate 22 by ion implantation at a dose of 1×10¹⁴cm⁻² to 1×10¹⁶ cm⁻² using, as a mask, the multilayer assemblage of thecontrol gate electrode 31 a, the capacitor dielectric film 30 c, and thefloating gate electrode 28 c in the memory cell unit (the left andcentral views in FIG. 18) and thereby yielded n-type source and drain(S/D) region layers 35 a and 35 b. In addition, phosphorus (P) orarsenic (As) as an n-type dopant was injected into the element formingregion of the Si substrate 22 by ion implantation at a dose of 1×10¹⁴cm⁻² to 1×10¹⁶ cm⁻² using the gate electrode 28 b in the peripheralcircuit unit (the right view in FIG. 18) as a mask and thereby yieldedS/D region layers 36 a and 36 b.

A phosphate-silicate glass film (PSG film) about 500 nm (5000 angstroms)thick was formed as an interlayer dielectric film 37 so as to cover thefirst gate unit 33 a in the memory cell unit (the left and central viewsin FIG. 19) and the second gate unit 33 b in the peripheral circuit unit(the right view in FIG. 19).

Subsequently, contact holes 38 a, 38 b, 39 a, and 39 b were formed onthe interlayer dielectric film 37 on the S/D region layers 35, 35 b, 36a, and 36 b, respectively. S/D electrodes 40 a, 40 b, 41 a and 41 b werethen formed respectively. In order to form the contact holes 38 a, 38 b,39 a and 39 b, the hole pattern was formed from the resist material andthen thickened the resist pattern with the resist pattern thickeningmaterial according to the present invention, thereby forming fine spacepattern of resists (hole patterns). Thereafter, the contact holes weremanufactured following a conventional method.

Thus, the FLASH EPROM as a semiconductor device was manufactured (FIG.19).

In the above-manufactured FLASH EPROM, the second gate dielectric film24 b in the peripheral circuit unit (the right views in FIGS. 11 through19) remains being covered by the first polysilicon film 28 or the gateelectrode 28 b after its formation (the right views in FIGS. 11 through19) and thereby keeps its initial thickness. Accordingly, the thicknessof the second gate dielectric film 24 b can be easily controlled, andthe concentration of a conductive dopant can be easily controlled forthe control of the threshold voltage.

In this embodiment, the first gate unit 33 a is formed by initiallypatterning in the gate width direction (the X direction in FIGS. 9 and10) to a set width and then patterning in the gate length direction (theY direction in FIGS. 9 and 10) to a target width. Alternatively, thefirst gate unit 33 a may be formed by initially patterning in the gatelength direction (the Y direction in FIGS. 9 and 10) to a set width andthen patterning in the gate width direction (the X direction in FIGS. 9and 10) to a target width.

Another FLASH EPROM was manufactured in the same way as in the aboveembodiment, except that the steps subsequent to the step of FIG. 19 werechanged to those shown in FIGS. 20, 29 and 30. This manufacture issimilar to the above embodiment, except for the followings.Specifically, a tungsten (W) film or a titanium (Ti) film about 200 nm(2,000 angstroms) thick was formed as a refractory metal film (fourthconductive film) 42 on the second polysilicon film 31 in the memory cellunit (the left and central views in FIG. 20) and the first polysiliconfilm 28 in the peripheral circuit unit (the right view in FIG. 20) andthereby yielded a polycide film. The steps of FIGS. 21 and 22 subsequentto the step of FIG. 20 were carried out in the same manner as in FIGS.17, 18, and 19 and a detail description thereof is omitted. The samecomponents in FIGS. 20, 21, and 22 as in FIGS. 17, 18, and 19 have thesame reference numerals.

Thus, a FLASH EPROM as a semiconductor device was manufactured (FIG.22).

The above-manufactured FLASH EPROM has the refracrory metal films(fourth conductive films) 42 a and 42 b on the control gate electrode 31a and the gate electrode 28 b and can thereby further reduce itselectrical resistance.

In this embodiment, the refracrory metal films 42 a and 42 b are used asthe fourth conductive films. Alternatively, refractory metal silicidefilms such as titanium silicide (TiSi) films can be used.

Yet another FLASH EPROM was manufactured by the manufacture procedure asin the above-mentioned embodiment, except for steps shown in FIGS. 23,24, and 25. Specifically, a second gate unit 33 c in the peripheralcircuit unit (second element region) (the right view in FIG. 23) has amultilayer structure equipped with a first polysilicon film (firstconductive film) 28 b, a SiO₂ film (capacitor dielectric film) 30 d, anda second polysilicon film (second conductive film) 31 b arranged in thisorder as in the first gate unit 33 a in the memory cell unit (the leftand central views in FIG. 23). The first polysilicon film 28 b and thesecond polysilicon film 31 b are shortened and thereby form a gateelectrode (FIGS. 24 and 25).

More specifically, with reference to FIG. 24, the first polysilicon film28 b and the second polysilicon film 31 b are shortened by forming anopening 52 a penetrating the first polysilicon film (first conductivefilm) 28 b, the SiO₂ film (capacitor dielectric film) 30 d and thesecond polysilicon film (second conductive film) 31 b at another portionthan the second gate unit 33 c shown in FIG. 23, for example, on thedielectric film 54, and filling the opening 52 a with a refractory metalfilm (third conductive film) 53 a such as a W film or a Ti film.Alternatively, with reference to FIG. 25, the first polysilicon film 28b and the second polysilicon film 31 b may be shortened by forming anopening 52 b penetrating the first polysilicon film (first conductivefilm) 28 b and the SiO₂ film (capacitor dielectric film) 30 d, therebyexposing the lower first polysilicon film 28 b at the bottom of theopening 52 b, and filling the opening 52 b with a refractory metal film53 b such as a W film or a Ti film.

In the above-manufactured FLASH EPROM, the second gate unit 33 c in theperipheral circuit unit has the same structure as the first gate unit 33a in the memory cell unit. Accordingly, the memory cell unit and theperipheral circuit unit can be formed by the same step to therebyefficiently simplify steps of the manufacture process.

In this embodiment, the third conductive film 53 a or 53 b and therefractory metal film (fourth conductive film) 42 were formedindependently. Alternatively, these films may be formed simultaneouslyas a refractory metal film in common.

The present invention aims at solving the shortcomings in the prior art,and can achieve the following objects.

The present invention can provide a resist pattern thickening materialwhich can utilize also an ArF (argon fluoride) excimer laser light as anexposure light during patterning; which is capable of thickening aresist pattern such as a lines & spaces pattern without depending on thesize of a resist pattern to be thickened by only applying the resistpattern thickening material over the surface of the formed resistpattern formed from the ArF resist or the like; which can be rinsed withwater or an alkaline developer; which is excellent in etch resistance;and which is capable of forming a fine space pattern of resist,exceeding exposure limits (resolution limits) of light sources ofavailable exposure devices, at low cost, easily, and efficiently.

The present invention can also provide a method for forming a resistpattern which, during patterning a resist pattern, can utilize also anArF excimer laser light as an exposure light without the necessity ofsetting up a new device; which is capable of thickening a resist patternsuch as a lines & spaces pattern without depending on the size of aresist pattern to be thickened; and which is capable of forming a finespace pattern of resist, exceeding exposure limits (resolution limits)of light sources of available exposure devices, at low cost, easily, andefficiently.

Further, the present invention can provide a method for manufacturing asemiconductor device in which, during patterning a resist pattern, ArFexcimer laser light can be utilized as a light source without thenecessity of setting up a new device; a fine space pattern of resist,exceeding exposure or resolution limits of light sources of availableexposure devices, can be formed; and which can efficiently mass-producea high performance semiconductor having a fine interconnection patternformed using the space patter of resist, and is to also provide a highperformance semiconductor which is manufactured by the method formanufacturing a semiconductor device and has fine interconnectionpatterns.

The resist pattern thickening material of the present invention can bepreferably used when finely forming a pattern such as a space pattern ofresist and an interconnection pattern, while thickening a resist patternformed from, e.g., ArF resist and using an exposure light duringpatterning, exceeding exposure or resolution limits of light sources ofavailable exposure devices, at low cost, easily and efficiently. Theresist pattern thickening material of the present invention is alsopreferably used in a variety of patterning methods, semiconductor devicemanufacturing processes, etc. and particularly preferably used in themethod for forming a resist pattern of the present invention and themethod for manufacturing a semiconductor device of the presentinvention.

The method for forming a resist pattern of the present invention ispreferably used in manufacturing functional parts such as mask patterns,reticule patterns, magnetic heads, LCDs (liquid crystal displays), PDPs(plasma display panels), SAW filters (surface acoustic wave filters);optical parts used in connecting optical wiring; fine parts such asmicroactuators; semiconductor devices; and the like, and can be suitablyemployed in the method for manufacturing a semiconductor device of thepresent invention.

The method for manufacturing a semiconductor device of the presentinvention is preferably used in manufacturing procedures of varioussemiconductor devices such as flash memory, DRAMs, FRAMs.

What is claimed is:
 1. A method for forming a resist pattern,comprising: forming a resist pattern on a surface of a workpiece to beprocessed, and applying a resist pattern thickening material over thesurface of the workpiece so as to cover the surface of the resistpattern, wherein the resist pattern thickening material comprises aresin, and a compound represented by the following General Formula (1),the resist pattern thickening material is nonaqueous and contains noacid generator and no crosslinker,

where “X” represents a functional group represented by the followingStructural Formula (1); “Y” represents at least any one of a hydroxylgroup, an amino group, an alkyl group-substituted amino group, an alkoxygroup, an alkoxycarbonyl group, and an alkyl group, and the number ofsubstituents in an amino group substituted by alkyl groups is an integerof 1 or 2; “m” is an integer of 1 or more; and “n” is an integer of 0 ormore,

where “R¹” and “R²” may be same to each other or different from eachother and respectively represent a hydrogen atom or a substituent group;“Z” represents at least any one of a hydroxyl group, an amino group, analkyl group-substituted amino group, and an alkoxy group, and the numberof substituents in an amino group substituted by alkyl groups is aninteger of 1 or
 2. 2. The method for forming a resist pattern accordingto claim 1, wherein after the applying of the resist pattern thickeningmaterial over the surface of the workpiece so as to cover the surface ofthe resist pattern, the resist pattern thickening material is heated. 3.The method for forming a resist pattern according to claim 1, whereinafter the heating of the resist pattern thickening material, the resistpattern thickening material is rinsed.
 4. The method for forming aresist pattern according to claim 3, wherein the resist patternthickening material is rinsed with at least any one of water and analkali developer.
 15. A method for manufacturing a semiconductor devicecomprising: forming a resist pattern on a surface of a workpiece to beprocessed, and then applying a resist pattern thickening material overthe surface of the workpiece so as to cover the surface of the resistpattern to thereby thicken the resist pattern, and patterning thesurface of the workpiece by etching the surface of the workpiece usingthe thickened resist pattern as a mask, wherein the resist patternthickening material comprises a resin, and a compound represented by thefollowing General Formula (1), the resist pattern thickening material isnonaqueous and contains no acid generator and no crosslinker,

where “X” represents a functional group represented by the followingStructural Formula (1); “Y” represents at least any one of a hydroxylgroup, an amino group, an alkyl group-substituted amino group, an alkoxygroup, an alkoxycarbonyl group, and an alkyl group, and the number ofsubstituents in an amino group substituted by alkyl groups is an integerof 1 or 2; “m” is an integer of 1 or more; and “n” is an integer of 0 ormore,

where “R¹” and “R²” may be same to each other or different from eachother and respectively represent a hydrogen atom or a substituent group;“Z” represents at least any one of a hydroxyl group, an amino group, analkyl group-substituted amino group, and an alkoxy group, and the numberof substituents in an amino group substituted by alkyl groups is aninteger of 1 or
 2. 6. The method for manufacturing a semiconductordevice according to claim 5, wherein the forming of the resist patternfurther comprises heating and rinsing the surface of the resist patternthickening material after the applying of the resist pattern thickeningmaterial over the surface of the workpiece so as to cover the surface ofthe resist pattern.
 7. The method for manufacturing a semiconductordevice according to claim 5, further comprising applying a surfactantover the surface of the resist pattern before the forming of the resistpattern.
 8. The method for manufacturing a semiconductor deviceaccording to claim 7, wherein the surfactant is at least one selectedfrom polyoxyethylene-polyoxypropylene condensation compounds,polyoxyalkylene alkyl ether compounds, polyoxyethylene alkyl ethercompounds, polyoxyethylene derivative compounds, sorbitan fatty acidester compounds, glycerine fatty acid ester compounds, primary alcoholethoxylate compounds, phenol ethoxylate compounds, nonylphenolethoxylate compounds, octylphenol ethoxylate compounds, lauryl alcoholethoxylate compounds, oleyl alcohol ethoxylate compounds, fatty acidester surfactants, amide surfactants, natural alcohol surfactants,ethylene diamine surfactants, secondary alcohol ethoxylate compounds,alkyl cationic surfactants, amide-type quaternary cationic surfactants,ester-type quaternary cationic surfactants, amine oxide surfactants,betaine surfactants, and silicone surfactants.
 9. The method formanufacturing a semiconductor device according to claim 5, wherein theresist pattern is formed from at least any one of an ArF resist and aresist containing an acrylic resin.
 10. A semiconductor devicemanufactured by a method for manufacturing a semiconductor device,wherein the method for manufacturing a semiconductor device comprisesforming a resist pattern on a surface of a workpiece to be processed,and then applying a resist pattern thickening material over the surfaceof the workpiece so as to cover the surface of the resist pattern tothereby thicken the resist pattern, and patterning the surface of theworkpiece by etching the surface of the workpiece using the thickenedresist pattern as a mask, wherein the resist pattern thickening materialcomprises a resin, and a compound represented by the following GeneralFormula (1), the resist pattern thickening material is nonaqueous andcontains no acid generator and no crosslinker,

where “X” represents a functional group represented by the followingStructural Formula (1); “Y” represents at least any one of a hydroxylgroup, an amino group, an alkyl group-substituted amino group, an alkoxygroup, an alkoxycarbonyl group, and an alkyl group, and the number ofsubstituents in an amino group substituted by alkyl groups is an integerof 1 or 2; “m” is an integer of 1 or more; and “n” is an integer of 0 ormore,

where “R¹” and “R²” may be same to each other or different from eachother and respectively represent a hydrogen atom or a substituent group;“Z” represents at least any one of a hydroxyl group, an amino group, analkyl group-substituted amino group, and an alkoxy group, and the numberof substituents in an amino group substituted by alkyl groups is aninteger of 1 or 2.